Everything completely in German and English. In the graphical representation of data, there are "pause" function. In this mode, the recorded data can be scrolled and zoomed by gesture. We would greatly appreciate the feedback on the app.
Based partly on chord-length-distribution method.En su montaje tampoco se requiere cableado, porque gracias a sus conectores RJ25 codificados por colores su electrnica se puede usar de forma sencilla e intuitiva. Theory of single-event upsets ( SEU) (changes in logic state caused by energetic charged subatomic particles) in complementary metal oxide/semiconductor (CMOS) logic devices extended to provide upper-bound estimates of rates of SEU when limited experimental information available and configuration and dimensions of SEU-sensitive regions of devices unknown. Licencia Este obra est bajo una licencia de Creative Commons Reconocimiento-NoComercial 3.0 Espaa. Especicacionestcnicas Categora Especicacin Softwareparaprogramacin (Mac/Windows/Linux) mBlock,ArduinoIDE App(iPad/Android) Makeblock,mBot Sensores 1xSensordeluz 1xBotn 1xReceptorIR(infrarrojo) 1xSensorultrasnicoToggleLED es un sencillo programa para arduino, en el cual al recibir el carcter 'L' por bluetooth cambia el estado del LED conectado a la patilla N 13. En las prximas secciones se utilizarn nombres en ingls de algunas componentes para evitar ambigedades 2.
Data from military and experimental flights as well as laboratory testing indicate that typical non-radiation-hardened 64K and 256K static random access memories (SRAMs) can experience a significant SEU rate at aircraft altitudes. Arduino IDECritical issues regarding SEU in avionicsThe energetic neutrons in the atmosphere cause microelectronics in avionic system to malfunction through a mechanism called single-event upsets (SEUs), and single-event latchup is a potential threat. Bluetooth 2.0 en adelante Software y programacin: mBlock (grfica) para Mac y Windows. Compatible con dispositivos Apple iOS 7 en adelante, Bluetooth 4.0 en adelante (excluyendo iPad1, iPad2, iPhone 4 y por debajo) Compatible con dispositivos Android 2.3 en adelante.
Areas for additional research include better definition of the atmospheric neutrons and protons, development of better calculational models (e.g., those used for protons), and better characterization of neutron-induced latchup.« lessIt is believed that the increase in SEUs with more modern devices may have serious consequences for future space missions. Specifications should be developed to guide avionics vendors in the analysis, prevention, and verification of neutron-induced SEU. A number of techniques are available for dealing with SEU: EDAC, redundancy, use of SEU-hard parts, reset and/or watchdog timer capability, etc. Avionics designers will need to take this susceptibility into account in current and future designs. Of all device types, RAMs are the most sensitive because they have the largest number of bits on a chip (e.g., an SRAM may have from 64K to 1Mmore » bits, a microprocessor 3K to 10K bits, and a logic device like an analog-to-digital converter, 12 bits).
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Results obtained from simulating the nature of SEU induced errors are shown to correlate with ground-based radiation test data.Hite, L. These tools are built around a commercial microprocessor simulator and are used to analyze real satellite application systems. It is concluded that the problem may be ameliorated by careful device selection and the use of redundancy or error correction.SEU induced errors observed in microprocessor systemsIn this paper, the authors present software tools for predicting the rate and nature of observable SEU induced errors in microprocessor systems.
In many cases, system error rates are overestimated because these methods generally overlook system level derating factors. Currently, system SEU analysis is performed by component level partitioning and then either: the most dominant SEU cross-sections (SEUs) are used in system error rate calculations or the partition SEUs are summed to eventually obtain a system error rate. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.SEU System Analysis: Not Just the Sum of All PartsSingle event upset ( SEU) analysis of complex systems is challenging.
Nayeem, Mustayeen Sutton, Akil K. Results using newly calibrated TCAD cold temperature substrate mobility models, and BSIM3 compact models extracted explicitly for the cold temperature designs, indicate a 33% reduction in SEU threshold for the range of temperatures simulated.Recent Results on SEU Hardening of SiGe HBT Logic CircuitsKrithivasan, Ramkumar Marshall, Paul W. A new NanoTCAD-to-Spectre interface is applied to perform mixed-mode SEU simulations of an SRAM cell. The scope of this presentation is to discuss the risks involved with our current scheme of SEU analysis for complex systems and to provide alternative methods for improvement.Simulation of SRAM SEU Sensitivity at Reduced Operating TemperaturesSanathanamurthy, S.
Zamani, Nasser Hicks, Kenneth A.This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose ( SEU/TD) Radiation Monitor chip. The topics include: 1) Introduction 2) TID and SEU in SiGe Technology 3) RHBD Techniques 4) Experiment 5) Heavy-Ion Data and Analysis and 6) Summary.Design and qualification of the SEU/TD Radiation Monitor chipBuehler, Martin G. Marshall, Cheryl J.A viewgraph presentation on SEU tolerant SiGe HBT technology is shown. Najafizadeh, Laieh Cressler, John D.
These chips revealed the quality of the CMOS fabrication process. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose.
This californium-based device is quite small and fits onto a bench top. Data analysis provides the energy of the individual ion responsible for each SEU thus, separate upset cross sections can be developed for different energy and mass regions of the californium spectrum. The TFD provides energy information for each transiting fragment. The Cf-252 fission fragments pass through a thin-film organic scintillator detector (TFD) on the way to the device under test (DUT). C.A system using Cf-252 and associated nuclear instrumentation has determined the single-event upset ( SEU) cross section versus linear energy transfer (LET) curve for several 2K x 8 static random access memories (SRAMs). Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL.A new method for using Cf-252 in SEU testingCostantine, A.
However, some of them require a lot of human, material and financial resources. Kouba, Coy O'Neill, Patrick M.We describe heavy ion test results for two new SEU tolerant latches based on transition nand gates, one for single rail asynchronous and the other for dual rail synchronous designs, implemented in AMI 0.5microprocess.Research on SEU hardening of heterogeneous Dual-Core SoCHuang, Kun Hu, Keliu Deng, Jun Zhang, TaoThe implementation of Single-Event Upsets ( SEU) hardening has various schemes.
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